Growth and characterization of Y2O3 thin films

Y2O3 thin films were grown on silicon (1 0 0) substrates by pulsed-laser deposition at different substrate temperatures and O2 pressures. The structure and composition of films are studied by using X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS). The Y2O3 thin films deposited in vacuum strongly oriented their [1 1 1] axis of the cubic structure and the film quality depended on the substrate temperature. The magnitude of O2 pressure obviously influences the film structure and quality. Due to the silicon diffusion and interface reaction during the deposition, yttrium silicate and SiO2 were formed. The strong relationship between composition and growth condition was discussed.