Phonon mechanism of mobility equilibrium fluctuation and properties of 1/f-noise

The main mechanisms of the generation of the equilibrium fluctuations of the electron mobility in homogeneous and non-degenerate semiconductors are studied. It is proven that the mobility fluctuations are related to energy fluctuations and are conditioned by random non-elastic scattering and generation-recombination processes. In particular, it is shown that the mobility fluctuations come into existence as a result of random electron-phonon and phonon-phonon scattering processes. The case of acoustic phonon-phonon scattering is considered in detail. The spectral density of the electron lattice mobility fluctuations is calculated on the base of a new phonon mechanism. It is shown that the noise spectrum over a broad frequency range has a 1/f form. The theoretical results for many samples agree with experimental data.