کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1816259 1525260 2007 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Molecular-dynamics analysis of the nucleation and crystallization process of Si
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
Molecular-dynamics analysis of the nucleation and crystallization process of Si
چکیده انگلیسی

Molecular-dynamics (MD) simulations of excimer-laser annealed Si using the Tersoff potential have been performed and the processes of the nucleation and crystallization of Si are monitored by the order parameter for each atom. The order parameter which identifies each atom belonging to the crystalline phase in amorphous and liquid-like environment is presented by a four-body correlation function. The simulation results show that the atomistic processes of the nucleation and crystallization of Si on crystalline Si (c-Si) substrates can be divided into several stages. Twins with low formation energy disturb the further crystallization of nucleus along the [111] direction.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica B: Condensed Matter - Volume 392, Issues 1–2, 15 April 2007, Pages 266–271
نویسندگان
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