Deep level transient spectroscopy studies at low temperature of In0.52Al0.48As epilayers

Deep level transient spectroscopy (DLTS) technique at low temperature has been performed to study the electrical properties of the In0.52Al0.48As epilayer lattice matched with InP(0 0 1). A new level, labelled N, has been detected at a temperature of about 36 K with an activation energy of about 20 meV. Photoluminescence (PL) studies together with numerical calculations based on the resolution of the Schrödinger equation have led us the proposition that the N signal is related to localized states due to compositional fluctuations in In0.52Al0.48As epilayer.