Stress-induced reorientation of the Pt-H2 complex in Si

We have studied stress-induced reorientation of the Pt-H2 complex in Si using isothermal deep-level transient spectroscopy (IT-DLTS) technique under uniaxial compressive stress. We have found that the intensity ratio of split components of the IT-DLTS peak for various magnitudes of applied stress up to 0.4 GPa is described by a Boltzmann factor, where the activation energy is proportional to the magnitude of the applied stress. The proportional factor is connected to an element of the piezospectroscopic tensor.