کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1816674 | 1525270 | 2006 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Characterization of defects created in Cz and epitaxial Si doped with Ga or B using Laplace-DLTS
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Characterization of defects created in Cz and epitaxial Si doped with Ga or B using Laplace-DLTS Characterization of defects created in Cz and epitaxial Si doped with Ga or B using Laplace-DLTS](/preview/png/1816674.png)
چکیده انگلیسی
We have measured the electrical and annealing properties of defects created in epitaxial and Czochralski-grown Si doped with either B or Ga by electron irradiation using both conventional and Laplace deep level transient spectroscopy (L)-DLTS. With L-DLTS, we have been able to resolve several defects that cannot be resolved using conventional DLTS. L-DLTS provides a new avenue to study defect introduction rates and annealing kinetics in B- and Ga-doped Si. The isochronal annealing behaviour of the defects was also investigated.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica B: Condensed Matter - Volumes 376â377, 1 April 2006, Pages 161-164
Journal: Physica B: Condensed Matter - Volumes 376â377, 1 April 2006, Pages 161-164
نویسندگان
Cloud Nyamhere, P.N.K. Deenapanray, F.D. Auret, F.C. Farlow,