کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1816695 | 1525270 | 2006 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Do palladium-dopant pairs exist in silicon?
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
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چکیده انگلیسی
The local structure and stability of an impurity complex of palladium in silicon has been studied on an atomic scale by perturbed angular correlation spectroscopy using the 100Pd/Rh probe nuclei. Palladium exists as an acceptor Pd- in n-type silicon and donor Pd+/2+ in p-type silicon. Owing to the Coulomb attraction between oppositely charged impurities, the probability of pair formation between palladium and dopants (P, As, Sb and B) seems to be quite favourable. In contrast, the impurity complex of the form PdSi-VSi has been identified in highly doped n-type silicon by its characteristic electric field gradient. The density function theory calculations of electric field gradient (EFG) for PdSi-VSi defect complex were consistent with the experimentally observed EFG.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica B: Condensed Matter - Volumes 376â377, 1 April 2006, Pages 245-248
Journal: Physica B: Condensed Matter - Volumes 376â377, 1 April 2006, Pages 245-248
نویسندگان
R. Dogra, D.A. Brett, A.P. Byrne, J. Mestnik-Filho, Y. Li, M.C. Ridgway,