Pseudomagnetoresistance in superconducting graphene pseudospin valve

• The pseudomagnetoresistance can be modulated by the pseudospin polarization.
• The pseudomagnetoresistance can be modulated by the bias voltage.
• The pseudomagnetoresistance can be controlled by the length of superconducting regions.

We investigate theoretically transport characteristics in a graphene pseudospinmagnet/superconductor double junction. It is shown that this double junction displays some distinct features as compared with the graphene ferromagnet/superconductor double junction due to the different physical mechanism of the pseudospin and the real spin. More importantly, the pseudomagnetoresistance in the present junction allows to be tuned by the pseudospin polarization, the bias voltage, and the length of the superconducting region. This opens up the possibility of designing graphene superconducting pseudospintronics device in the near future.