کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1818562 1525746 2011 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Stoichiometric transfer of material in the infrared pulsed laser deposition of yttrium doped Bi-2212 films
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
Stoichiometric transfer of material in the infrared pulsed laser deposition of yttrium doped Bi-2212 films
چکیده انگلیسی

Films of Y-doped Bi-2212 were successfully grown on MgO (1 0 0) substrates by infrared pulsed laser deposition (IR-PLD). With post-heat treatments, smooth and highly c-axis oriented films were obtained. The average compositions of the films have the same stoichiometry as the target. Y content is also preserved on the grown films at all doping levels. The electrical properties of the grown Y-doped Bi-2212 films exhibit the expected electrical properties of the bulk Y-doped Bi-2212. This is attributed to the stoichiometric transfer of material by IR-PLD.


► This work describes the stoichiometric transfer of Y-doped Bi-2212 during IR-PLD.
► As-deposited films show spheroidal morphology with similar composition as the target. Relatively flat and highly c-axis oriented films were obtained after heat treatment.
► IR-PLD can be a viable technique in growing other high Tc superconducting materials.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica C: Superconductivity - Volume 471, Issues 11–12, June 2011, Pages 378–383
نویسندگان
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