کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1819135 1525762 2009 10 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Heteroepitaxial film growth of layered compounds with the ZrCuSiAs-type and ThCr2Si2-type structures: From Cu-based semiconductors to Fe-based superconductors
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
Heteroepitaxial film growth of layered compounds with the ZrCuSiAs-type and ThCr2Si2-type structures: From Cu-based semiconductors to Fe-based superconductors
چکیده انگلیسی

FeAs-based layered superconductors such as F-doped LaFeAsO have recently been investigated intensively because of their high superconducting transition temperatures. Epitaxial films of these compounds are important to examine their intrinsic materials properties as well as to transfer them to device applications. In this review, we first present our research route from transparent p-type oxides semiconductors to the Fe-based superconductors. Then we review growth of epitaxial thin films for the layered oxychalcogenides and oxypnictides. Reactive solid-phase epitaxy technique was inevitable to prepare epitaxial thin films of the oxychalcogenides and Zn-based oxypnictides. On the other hand, epitaxial thin films of Mn-based oxypnictides were grown by standard pulsed laser deposition. These techniques, however, did not grow epitaxial thin films for LaFeAsO. Thus, we developed a modified pulsed laser deposition process and succeeded in obtaining epitaxial thin films of FeAs-based superconductors, LaFeAsO and cobalt-doped SrFe2As2.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica C: Superconductivity - Volume 469, Issues 9–12, 1 May–15 June 2009, Pages 657–666
نویسندگان
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