Ramp-type YBa2Cu3Ox SNS Josephson junctions with interlayer via ion damage

We have investigated properties of high-Tc superconductor ramp-type (SNS) superconductor–normal layer–superconductor Josephson junctions with interlayer (N) prepared by ion beam modification of YBa2Cu3Ox (YBCO) ramp surface. Electrical properties of SNS Josephson junctions can be described by the resistively shunted junction model near 77 K. Junctions have been prepared by an ex situ method and the junction interface was realized during the ramp patterning in one technological step. The critical current dependence on magnetic field and sharp Shapiro steps confirm homogenous properties of the interlayer. We believe that the ion-damaged high-Tc superconducting ramp-type SNS Josephson junctions are a suitable candidate to form more complex active elements of cryoelectronic circuits.