کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
187008 459631 2013 7 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Influence of annealing temperature on photoelectrochemical water splitting of α-Fe2O3 films prepared by anodic deposition
موضوعات مرتبط
مهندسی و علوم پایه مهندسی شیمی مهندسی شیمی (عمومی)
پیش نمایش صفحه اول مقاله
Influence of annealing temperature on photoelectrochemical water splitting of α-Fe2O3 films prepared by anodic deposition
چکیده انگلیسی

The present work explores the use and optimization of α-Fe2O3 layers prepared via anodic deposition of FeOOH on FTO. Layer thickness and annealing temperature are studied in view of morphology, structure, and solar light water splitting efficiency. Previously reported limits of such anodic structures can be overcome by optimal annealing (i.e. under conditions where the Fe2O3 layer becomes Sn-doped by diffusion from the FTO substrate). As a result the layers, when annealed at 650 °C for 1 h and 750 °C for 20 min, reach a 0.87 mA cm−2 at 1.23 V (vs. RHE) in 1 M KOH solution under simulated solar illumination AM 1.5 (100 mW cm−2) conditions – this is 2–3 times higher than previously reached with these structures. The main effect of optimized annealing (and Sn-doping) can be observed from impedance measurements in a drastically reduced charge transfer resistance. Additional modification with O2 evolution catalysts (IrO2, cobalt species) is less significant and leads mainly to a slight beneficial shift of the photocurrent onset potential.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Electrochimica Acta - Volume 91, 28 February 2013, Pages 307–313
نویسندگان
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