کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
190687 | 459704 | 2011 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
p-Type and n-type Cu2O semiconductor thin films: Controllable preparation by simple solvothermal method and photoelectrochemical properties
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی شیمی
مهندسی شیمی (عمومی)
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: p-Type and n-type Cu2O semiconductor thin films: Controllable preparation by simple solvothermal method and photoelectrochemical properties p-Type and n-type Cu2O semiconductor thin films: Controllable preparation by simple solvothermal method and photoelectrochemical properties](/preview/png/190687.png)
چکیده انگلیسی
p-Type and n-type Cu2O thin films were controllably prepared using a simple solvothermal method by adjusting pH value of the copper (II) acetate aqueous solution. Photoelectrochemical experiments show that the Cu2O thin films synthesized in acid and alkaline (or neutral) media present n-type and p-type semiconductor character, respectively. Moreover, the films prepared at pH 5 have the best photoelectrochemical properties. The mechanism for the formation of these p-type and n-type Cu2O films is discussed. The Cu2O p–n homojunction fabricated in this study shows typical p–n junction character. This facile preparation method may be a promising way to prepare p–n homojunctions for semiconductor devices.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Electrochimica Acta - Volume 56, Issue 6, 15 February 2011, Pages 2735–2739
Journal: Electrochimica Acta - Volume 56, Issue 6, 15 February 2011, Pages 2735–2739
نویسندگان
Liangbin Xiong, Sheng Huang, Xi Yang, Mingqiang Qiu, Zhenghua Chen, Ying Yu,