Double hollow cathode plasma jet-low temperature method for the TiO2−xNx photoresponding films

The low temperature double hollow cathode plasma jet method for producing photoresponding thin transparent layers of TiO2−xNx is reported. This technique allows involvement of thermally sensitive materials as supports. Dependence of the properties of the films on the applied RF field power was clearly demonstrated. Produced films were first characterized with the aid of a number of characterization methods (AFM, SEM, XRD, photothermal deflection spectroscopy (PDS), Raman spectroscopy, X-ray photoelectron spectroscopy (XPS) and UV–vis), then their photocurrent generation efficiencies upon illumination with spectrally well defined narrow light beams were described. These tests based on the recorded polarization curves revealed a significant dependence of the scanning direction (anodic and/or cathodic) on the Eon (photocurrent onset) and an appearance of the photocurrent maxima. Open circuit potential (OCP), cyclic voltammetry and amperometry tests were also performed. The RF power magnitude was identified as the parameter affecting substantially the photoinduced properties of the produced films.