کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
192085 | 459735 | 2010 | 8 صفحه PDF | دانلود رایگان |
![عکس صفحه اول مقاله: Seedless copper electroplating on Ta from a “single” electrolytic bath Seedless copper electroplating on Ta from a “single” electrolytic bath](/preview/png/192085.png)
An alternative approach for copper electroplating on Ta surface from a “single” injected bath is being described in this work. Copper electrodeposition over a thin TaN/Ta barrier was performed in a two-step process: (1) activation conducted by electrochemically reduction of Ta oxide from the TaN/Ta barrier at a negative potential of −2 V for a short period (“removal” step) and (2) copper electroplating performed in the invariable electrochemical bath by injecting a solution containing Cu-ions. Supplementary Cu plating is continued by shifting the applied potential to −1.2 V in the same electrolytic bath. It was also established that addition of low content (up to 10 ppm) dimercaptothiadiazole (DMcT) improves Cu nucleation and growth on Ta surface and allows a conformal features fillings. Copper layer deposited is characterized with an excellent adhesion to the Ta surface.
Journal: Electrochimica Acta - Volume 55, Issue 5, 1 February 2010, Pages 1656–1663