کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
192513 459744 2008 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Potentiostatic formation of porous silicon in dilute HF: Evidence that nanocrystal size is not restricted by quantum confinement
موضوعات مرتبط
مهندسی و علوم پایه مهندسی شیمی مهندسی شیمی (عمومی)
پیش نمایش صفحه اول مقاله
Potentiostatic formation of porous silicon in dilute HF: Evidence that nanocrystal size is not restricted by quantum confinement
چکیده انگلیسی

The role that applied potential has in controlling the properties of porous silicon formed on highly conductive p-type silicon in diluted HF has been investigated by studying the photoluminescence characteristics along the current–voltage curve and using high resolution transmission electron microscopy (HRTEM) evidence to support the conclusions drawn. A dramatic decrease in the average nanocrystal size was found to take place after the etching current density switched from an exponential dependence on the applied potential to a linear relationship. Importantly this event occurred prior to reaching the Ups potential (usually consider the onset of electropolishing). This rapid decrease in particle sizes has been explained in terms of the partial formation of an oxide film. The presence of oxygen terminated porous silicon allows a trapped exciton states model to be invoked, which removes the quantum confinement restrictions on the minimum particle size. Support for the presence of a partial oxide prior to Ups comes from both FTIR measurements and previous literature related to the location of the flat-band potential.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Electrochimica Acta - Volume 53, Issue 13, 20 May 2008, Pages 4381–4386
نویسندگان
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