Development of growth cycle for antimony telluride film on Au (1 1 1) disk by electrochemical atomic layer epitaxy

Electrochemical deposition of Sb2Te3 thin film on Au (1 1 1) disk via the route of electrochemical atomic layer epitaxy (ECALE) is described in this paper. Electrochemical aspects of Te and Sb on Au, Te on Sb-covered Au, and Sb on Te-covered Au were studied by means of cyclic voltammetry and coulometry. The apparent variation of coverage for Te or Sb on hetero-covered substrate is explained by considering the thermodynamic process of compound formation. A steady ECALE deposition for Sb2Te3 compound could be attained after negatively adjusting the underpotential deposition (UPD) potentials of Sb and Te on Au in steps over the initial 40 cycles, and the potentials could be kept constant for the following deposition. A 200-cycle deposit, which was grown with the steady deposition potentials, was proved to be a single phase Sb2Te3 compound by X-ray diffraction analysis. The 2:3 stoichiometric ratio of the deposit was further verified by energy dispersive X-ray (EDX) quantitative analysis. The p-type semiconductive property was demonstrated by measurements of the Seebeck coefficient and the electrical resistivity with a value of 145 μV/K and 9.37 μΩm, respectively. The morphologies of deposits with various growth cycle numbers were observed with FE-SEM. The evolvement mechanism of the morphology was investigated. The results show that the morphology of deposit has changed after initial potential adjustment and numberless thin sheets appeared and grew uprightly during the continuous cycle process. Fourier transform infrared spectroscopy (FTIR) absorption measurements suggested a band gap of 0.26 eV in very good agreement with literature reports for Sb2Te3 single crystals.