کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
193320 459766 2008 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Cu micropatterning on n-Si(1 1 1) by selective electrochemical deposition using an agarose stamp
موضوعات مرتبط
مهندسی و علوم پایه مهندسی شیمی مهندسی شیمی (عمومی)
پیش نمایش صفحه اول مقاله
Cu micropatterning on n-Si(1 1 1) by selective electrochemical deposition using an agarose stamp
چکیده انگلیسی

Electrochemical wet stamping (E-WETS) was applied for selective deposition of Cu on n-Si(1 1 1) using an agarose stamp. The agarose stamp was first prepared by molding against a master with an array of depressions using its property of plasticity. Cu microstructures were then fabricated directly by preferential electrochemical deposition involving contact between the stamp and a n-Si(1 1 1) workpiece. The gel stamp behaves as a current flow channel between the working electrode and the counter electrode. Furthermore, it simultaneously supplies electrolyte to preferential parts of the n-Si surface. Cu microstructures complementary of those on the master were patterned on the workpiece. The lateral deviation of the fabricated microstructures from those on the master was approximately 0.6%.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Electrochimica Acta - Volume 53, Issue 18, 20 July 2008, Pages 5628–5631
نویسندگان
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