کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
194132 459785 2008 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Growth and characterization of highly oriented CuBr thin films through room temperature electrochemical route
موضوعات مرتبط
مهندسی و علوم پایه مهندسی شیمی مهندسی شیمی (عمومی)
پیش نمایش صفحه اول مقاله
Growth and characterization of highly oriented CuBr thin films through room temperature electrochemical route
چکیده انگلیسی

A simple electrochemical process has been demonstrated to grow highly oriented copper(I) bromide thin films on indium-doped tin oxide (ITO) glass through reducing CuBr2 in aqueous solutions at room temperature. The copper(I) bromide thin films grow preferential orientation along the 〈1 1 1〉 crystal axis from the X-ray diffraction patterns. The orientation growth of the CuBr thin films is little affected by the solution pH and applied potentials. The possible mechanism of the orientation growth has been discussed, and the surface energy of different crystal plane of CuBr crystal is believed to play an important role to control the orientation growth of the CuBr thin films. The oriented films exhibit intense free-exciton photoluminescence at room temperature.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Electrochimica Acta - Volume 54, Issue 2, 30 December 2008, Pages 242–246
نویسندگان
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