کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
194767 | 459799 | 2007 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Electrochemical materials and processes in Si integrated circuit technology
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی شیمی
مهندسی شیمی (عمومی)
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چکیده انگلیسی
Various technical issues related to feature scaling and recent electrochemical technologies advances for on-chip copper interconnects at Intel are reviewed. Effects of additives on electroplating, as well as performance of novel Cu direct plating on ruthenium liner are discussed. An electroless cobalt capping layer of Cu lines, which led to increased electromigration resistance, has been characterized. The potential application of carbon nanotubes as future interconnects materials, their properties and controlled placement by using dielectrophoresis are also reviewed.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Electrochimica Acta - Volume 52, Issue 8, 10 February 2007, Pages 2891–2897
Journal: Electrochimica Acta - Volume 52, Issue 8, 10 February 2007, Pages 2891–2897
نویسندگان
V.M. Dubin, R. Akolkar, C.C. Cheng, R. Chebiam, A. Fajardo, F. Gstrein,