Nanopatterning of silicon with use of self-organized porous alumina and colloidal crystals as mask

Nanopatterning processes based on a localized anodization of Si and the subsequent chemical etching of SiO2 were developed to fabricate a dot array and a hole array on an Si surface using self-organized anodic porous alumina as a mask. Through the porous alumina mask, regularly arranged metal nanopatterns on the Si surface were fabricated by the electroless deposition of Cu nanodots in a CuSO4/hydrofluoric acid (HF) solution. The periodicity of the Cu dot arrays was determined using the pore interval of the upper anodic alumina. Using self-assembled nanospheres as a mask for an electroless plating of metals such as Cu and Ag on the Si substrate, the patterning of an ordered honeycomb structure and a hexagonally arranged convex array of metals on Si was also developed by the combination of colloidal crystal patterning and wet chemical etching. The proposed patterning processes of the Si surface have potential technological applications in fields that need textured surfaces of controlled nanoscale periodicity and morphology owing to their relative simplicity and low cost.