کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
4758702 | 1420652 | 2017 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Electron irradiation study of room-temperature wafer-bonded four-junction solar cell grown by MBE
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی شیمی
کاتالیزور
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چکیده انگلیسی
For application in space environments, the effect of 1-MeV electron irradiation on wafer-bonded GaInP/GaAs//InGaAsP/InGaAs four-junction solar cell grown by all solid state molecular beam epitaxy was studied. After exposure to 1-MeV electron irradiation at 1Ã15 e/cm2, an end of life remaining factor of approximately 85% was obtained. The wafer bonding interface was studied by spectral response and transmission electron microscopy. 1-MeV electron irradiation was conducted on the individual InGaAsP and InGaAs single junction cell, respectively. The degradation of the four-junction cell was mainly due to damage on the InGaAsP and InGaAs subcells rather than the bonding interface.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solar Energy Materials and Solar Cells - Volume 171, November 2017, Pages 118-122
Journal: Solar Energy Materials and Solar Cells - Volume 171, November 2017, Pages 118-122
نویسندگان
Pan Dai, Lian Ji, Ming Tan, Shiro Uchida, Yuanyuan Wu, Aierken Abuduwayiti, Maliya Heini, Qi Guo, Lifeng Bian, Shulong Lu, Hui Yang,