کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
4766922 | 1424109 | 2017 | 12 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Ternary composite Si/TiN/MnO2 taper nanorod array for on-chip supercapacitor
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی شیمی
مهندسی شیمی (عمومی)
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
We present a ternary composite Si/TiN/MnO2 taper nanorod array electrode for large specific capacitance on-chip supercapacitor. The capacitor is based on conformal deposition of pseudo-capacitive MnO2 nano-layer and TiN current collector nano-layer on a silicon taper nanorod array (Si-TNR) scaffold. The key fabrication processes include cyclic deep reactive ion etch (DRIE) of silicon, atomic layer deposition (ALD) of TiN, as well as solution chemical deposition of MnO2. Different growth modes of MnO2 functional layers via electrochemical deposition (ED) and electroless chemical deposition (CD) are investigated in terms of thickness, morphology, and conformality. Optimization of the supercapacitor performance by controlling the loading amount of pseudo-capacitive layer on taper nanorod array scaffold is demonstrated. The electrode design targeting taper nanorod array enables improved and effective mass loading of active material towards high specific capacitance. The obtained Si-TNR/TiN/MnO2 electrode offers areal specific capacitance of 81.6 mF cmâ2 as evaluated at 5Â mVÂ sâ1 scan rate (41.3 mF cmâ2 at 200Â mVÂ sâ1), showing â¼70 times improvement in areal capacitance compared to that of the Si-TNR/TiN electrode.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Electrochimica Acta - Volume 248, 10 September 2017, Pages 397-408
Journal: Electrochimica Acta - Volume 248, 10 September 2017, Pages 397-408
نویسندگان
Pai Lu, Einar Halvorsen, Per Ohlckers, Lutz Müller, Steffen Leopold, Martin Hoffmann, Kestutis Grigoras, Jouni Ahopelto, Mika Prunnila, Xuyuan Chen,