Dual functionality of threshold and multilevel resistive switching characteristics in nanoscale HfO2-based RRAM devices for artificial neuron and synapse elements

Dual functionality of threshold and multilevel resistive switching characteristics in nanoscale HfO2-based RRAM devices for artificial neuron and synapse elements

Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronic Engineering - Volume 182, 5 October 2017, Pages 42-45

Jiyong Woo, Dongwook Lee, Yunmo Koo, Hyunsang Hwang,