Electrical characteristics of Ge buried channel FinFETs with interfacial layers treated by F/N/H-based plasma

Electrical characteristics of Ge buried channel FinFETs with interfacial layers treated by F/N/H-based plasma

Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronic Engineering - Volume 178, 25 June 2017, Pages 5-9

Yan-Lin Li, Kuei-Shu Chang-Liao, Chao-Chen Ku, Dun-Bao Ruan, Chin-Hsiu Huang, Yi-Wen Hsu, Shang-Fu Tsai, Meng-Ying Yang, Wen-Fa Wu,