Electronic transport parameters of indium zinc oxide thin films after Al2O3/HfO2 top-dielectric formation annealing

Electronic transport parameters of indium zinc oxide thin films after Al2O3/HfO2 top-dielectric formation annealing

Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronic Engineering - Volume 178, 25 June 2017, Pages 164-167

G.A. Umana-Membreno, Y. Song, N.D. Akhavan, J. Antoszewski, D.C. Paine, A. Zaslavsky, L. Faraone,