The effects of process temperature on the work function modulation of ALD HfO2 MOS device with plasma enhanced ALD TiN metal gate using TDMAT precursor

The effects of process temperature on the work function modulation of ALD HfO2 MOS device with plasma enhanced ALD TiN metal gate using TDMAT precursor

Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronic Engineering - Volume 178, 25 June 2017, Pages 284-288

Young Jin Kim, Donghwan Lim, Hoon Hee Han, Andrey Sokolov Sergeevich, Yu-Rim Jeon, Jae Ho Lee, Seok Ki Son, Changhwan Choi,