کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
4970896 1450307 2017 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Blue-green InGaN/GaN light-emitting diode with mesh-like top metal electrode
موضوعات مرتبط
مهندسی و علوم پایه مهندسی کامپیوتر سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
Blue-green InGaN/GaN light-emitting diode with mesh-like top metal electrode
چکیده انگلیسی


- Blue-green light-emitting diodes with mesh-like electrode demonstrate broad EL-spectrum.
- In EL-spectrum blue and green emission peaks are equal with shallow trough between them.
- Observed EL-spectrum is related to spatially nonuniform current injection.
- Position-dependent compensation of quantum-confined Stark effect takes place.

Light-emitting diodes (LEDs) with blue-green dual-wavelength emission and top metal electrode patterned as a mesh were fabricated using InGaN/GaN material system and tested. In pulsed voltage supply mode an increase in injected current resulted in electroluminescence (EL) with equal peak intensities of blue and green emission lines and shallow trough between them. These features of the LED EL-spectrum can be attributed to the effect of the mesh-like patterning of the top electrode.Meshed electrode promotes the injection of current spatially nonuniform along the planes of the quantum well (QWs) which results not only in spatial nonuniformity of the intensity of generated light but also may contribute to position-dependent compensation of Quantum-confined Stark effect (QCSE) resulting in blue shift of EL in the QWs. The observed phenomenon can be used to control or engineer the EL spectra of dual-wavelength LEDs by electrode patterning.

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ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronic Engineering - Volume 174, 25 April 2017, Pages 80-84
نویسندگان
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