Fabrication and characterization of micromechanical bridges with strain sensors deposited using focused electron beam induced technology

- The piezoresistive stress sensor on the silicon nitride microresonators were fabricated.
- The piezoresistive stress sensor were fabricated with focused electron beam induced deposition (FEBID) technology.
- We report a characterization procedures of microstructures using atomic force microscopy methods.

In this paper we present a method of fabrication and characterization of strain sensors fabricated with a focused electron beam induced deposition (FEBID) technology from Pt precursor. The FEBID structures were used as deflections sensors and applied to read-out resonance frequency of micromechanical bridges. In our experiments we have investigated silicon nitride structures with an integrated metallization path on which the FEBID strain sensors were deposited. In order to modify mechanical properties of the microbridge we developed and applied a focused ion beam (FIB) milling technology which allowed to modify the distribution of mechanical stress and consequently increase the deflection detection sensitivity. An atomic force microscopy (AFM) technology was applied to both characterize the electrical properties of the deposited structures and characterize properties of the fabricated devices. In this way the gauge factor (GF) of the FEBID fabricated nanogranular resistors (NGRs) of 4.25 was determined for the static microbridge deflection.

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