کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
4971090 | 1450316 | 2016 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Characterization of signal transfer performance of a through glass via (TGV) substrate with silicon vertical feedthroughs
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی کامپیوتر
سخت افزارها و معماری
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چکیده انگلیسی
This figure shows the schematic view and key fabrication process of the TGV substrate with a micro silicon resonator. The glass interposer surrounding the silicon vertical feedthroughs is formed by double-side glass reflow process in which the melted glass fills into the silicon mold. A cavity for the vibration of the silicon resonator is realized by etching the refilled glass, and then metal electrodes are formed in the cavity. The bonding interface is filled with refilled glass, which enables the resonator to be anodically bonded to the TGV substrate. In this way, parallel plate capacitor is formed between the resonator and the electrodes, and then the resonator can be excited by capacitive transduction.252
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronic Engineering - Volume 165, 1 November 2016, Pages 52-56
Journal: Microelectronic Engineering - Volume 165, 1 November 2016, Pages 52-56
نویسندگان
Li Wenyin, Wu Xuezhong, Xiao Dingbang, Hou Zhanqiang, Chen Zhihua, Wang Xinghua, Zhou Jian,