کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5005824 | 1461376 | 2017 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Magnetron-sputtered high performance Y-doped ZnO thin film transistors fabricated at room temperature
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
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چکیده انگلیسی
In this report, sputtered-grown undoped ZnO and Y-doped ZnO (ZnO:Y) thin film transistors (TFTs) are presented. Both undoped ZnO and ZnO:Y thin films exhibited highly preferred c-axis oriented (002) diffraction peaks. The ZnO:Y thin film crystallinity was improved with an increase of (002) peak intensity and grain size. The electrical properties of ZnO:Y TFTs were significantly enhanced relative to undoped ZnO TFTs. ZnO:Y TFTs exhibited excellent performance with high mobility of 38.79Â cm2Â Vâ1Â sâ1, small subthreshold swing of 0.15Â V/decade, and high Ion/Ioff current ratio of the order of 8.17 Ã 107. The O1s X-ray photoelectron spectra (XPS) showed oxygen vacancy-related defects present in the ZnO:Y TFTs, which contributed to enhancing the mobility of the TFTs.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science in Semiconductor Processing - Volume 71, 15 November 2017, Pages 204-208
Journal: Materials Science in Semiconductor Processing - Volume 71, 15 November 2017, Pages 204-208
نویسندگان
Manoj Kumar, Hakyung Jeong, Amit Kumar, Beer Pal Singh, Dongjin Lee,