کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
5005835 1461376 2017 7 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Tailored wafer holder for a reliable deposition of sputtered aluminium nitride thin films at low temperatures
ترجمه فارسی عنوان
نگه دارنده ویفر مخصوص برای رسوب قابل اعتماد از فیلم های نازک آلومینیوم اسپری شده در دمای پایین
موضوعات مرتبط
مهندسی و علوم پایه سایر رشته های مهندسی مهندسی برق و الکترونیک
چکیده انگلیسی
Active actuated resonant micro-electro-mechanical-systems (MEMS) are used for sensing purpose like topography analysis and viscosity sensors. Those applications require straight beams and they rely on controlled film stress of the involved thin films, e.g. the active piezoelectric aluminium nitride (AlN) layer. The AlN consists of aluminium and nitrogen and is deposited with a reactive sputter process. The deposition process heats up the substrate and therefore the wafer bow of the substrate causes a variation of the thermal connection between wafer and sample holder. This goes along with undefined film stress of the AlN layer. In order to minimize the derivation of film stress, the reduction of substrate temperature and the enhancement of thermal connection between substrate and substrate holder is targeted. Therefore a novel clamped substrate holder is designed. High thermal connection to the ambient equipment, equal heat distribution and clamping of wafer stabilize the deposited AlN layer. By examining the layer stress and applying an acid structuring method, an improvement of deposited film is observed. A long term study with AlN deposition with thicknesses of 0.5 µm, 1.0 µm and 2.0 µm on silicon wafers was made to confirm the enhancement.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science in Semiconductor Processing - Volume 71, 15 November 2017, Pages 283-289
نویسندگان
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