کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
5005850 1461376 2017 7 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
A novel vacuum epitaxial lift-off (VELO) process for separation of hard GaAs substrate/carrier systems for a more green semiconductor LED production
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه سایر رشته های مهندسی مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
A novel vacuum epitaxial lift-off (VELO) process for separation of hard GaAs substrate/carrier systems for a more green semiconductor LED production
چکیده انگلیسی
This study reports on a novel vacuum epitaxial lift-off (VELO) process to reuse the GaAs substrates in light-emitting diode (LED) production. The method is based on an epitaxial lift-off technique, whose application is however limited to flexible wafers, as gaseous reaction products (e.g. AsH3) formed during the etching of AlAs with hydrofluoric acid are trapped within the wafer stack. In the developed VELO process, an applied vacuum of ∼5000Pa to the bonded wafer stack removes such detrimental reaction gases, allowing a separation of hard substrate/carrier systems. The VELO process is evaluated with a state-of-the-art thin-film light-emitting diode (TF-LED) phosphide-based epitaxial structure with a buried AlAs sacrificial layer and a simplified LED chip construction at 4-in. wafer level. Characterization of the so-processed LEDs using high-resolution x-ray diffraction, μ-photoluminescence and electrical testing reveal that the VELO TF-LEDs show a comparable performance like to released chips by using conventional grinding/polishing and etching of the GaAs substrate. As our VELO process is non-destructive to the substrate, the GaAs wafers can be reused, enabling lower costs for LED production and reduced toxic waste to establish a green semiconductor production.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science in Semiconductor Processing - Volume 71, 15 November 2017, Pages 389-395
نویسندگان
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