کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5005857 | 1461376 | 2017 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Direct synthesis of quaternary Cd(Zn, S)Se thin films: Effects of composition
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
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چکیده انگلیسی
In the present communication, the binary CdSe and quaternary Cd1-xZnxSe1-ySy (0 ⤠x = y ⤠0.35) thin films were synthesized using a chemical bath deposition. Thin film deposition was carried out at the optimized conditions (pH = 10 ± 0.1, deposition temperature = 70 ± 0.1 °C, deposition time = 100 min and substrate rotation speed = 65 ± 2 rpm). X-ray diffraction studies confirmed hexagonal-wurtzite crystal structure with the formation of quaternary Cd(Zn, S)Se phase along with binary CdSe, CdS, ZnS and ZnSe, phases of the as-grown Cd1-xZnxSe1-ySy thin films. Elemental analysis showed presence of Cd2+, Zn2+, S2- and Se2- in the deposited films. Fourier transform infrared spectroscopy shown the bands at 911.15 cmâ1 - 901.62 cmâ1 which are assigned to the stretching frequency of Cd-Se bond. Scanning electron microscopy show transformation of the microstructure from globular crystallites to a rhomboid flake like network. The electrical conductivity was typically â 10â7 Ωâ1 cmâ1. At low temperatures, the conduction was by variable range hopping, and this changed to thermally activated grain boundary dominated conduction for T > 350 K.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science in Semiconductor Processing - Volume 71, 15 November 2017, Pages 447-453
Journal: Materials Science in Semiconductor Processing - Volume 71, 15 November 2017, Pages 447-453
نویسندگان
G.T. Chavan, S.T. Pawar, V.M. Prakshale, S.M. Pawar, S. Ezugwu, N.B. Chaure, S.S. Kamble, N.N. Maldar, L.P. Deshmukh,