کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5005878 | 1461377 | 2017 | 8 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Electronic properties of Si/Si-Ge Alloy/Si(100) heterostructures formed by ECR Ar plasma CVD without substrate heating
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
By using our low-energy Ar plasma enhanced chemical vapor deposition (CVD) at a substrate temperature below 100 °C during plasma exposure without substrate heating, modulation of valence band structures and infrared photoluminescence can be observed by change of strain in a Si/strained Si0.4Ge0.6/Si(100) heterostructure. For the strained Si0.5Ge0.5 film, Hall mobility at room temperature was confirmed to be as high as 660 cm2 Vâ1 sâ1 with a carrier concentration of 1.3Ã1018 cmâ3 for n-type carrier, although the carrier origin was unclear. Moreover, good rectifying characteristics were obtained for a p+Si/nSi0.5Ge0.5 heterojunction diode. This indicates that the strained Si-Ge alloy and Si films and their heterostructures epitaxially grown by our low-energy Ar plasma enhanced CVD without substrate heating can be applicable effectively for various semiconductor devices utilizing high carrier mobility, built-in potential by doping and band engineering.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science in Semiconductor Processing - Volume 70, 1 November 2017, Pages 55-62
Journal: Materials Science in Semiconductor Processing - Volume 70, 1 November 2017, Pages 55-62
نویسندگان
Naofumi Ueno, Masao Sakuraba, Yoshihiro Osakabe, Hisanao Akima, Shigeo Sato,