کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5005884 | 1461377 | 2017 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Mapping of ion-implanted n-SiC schottky contacts using scanning internal photoemission microscopy
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
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چکیده انگلیسی
Nitrogen-ion-implantation damage on SiC has been clearly imaged using scanning internal photoemission microscopy (SIPM). Ni Schottky contacts were formed on selectively N-ion-implanted n-SiC surfaces at 80Â keV with an ion dose of 1Ã1015Â cmâ2. A photocurrent, Y (photoyield; defined as photocurrent per incident photon), was detected by focusing and scanning a laser beam over the contacts. The N-ion-implanted regions were clearly imaged with Y measurements. Y was detected even where the implanted region is protruding out of the electrode in the unannealed sample. We also found significant increase of Y in the periphery of the ion-implanted region. We confirmed that SIPM is a powerful tool for mapping damages due to ion implantation.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science in Semiconductor Processing - Volume 70, 1 November 2017, Pages 86-91
Journal: Materials Science in Semiconductor Processing - Volume 70, 1 November 2017, Pages 86-91
نویسندگان
Shingo Murase, Tomoyoshi Mishima, Tohru Nakamura, Kenji Shiojima,