کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5005895 | 1461377 | 2017 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Low-temperature crystallization of Ge-rich GeSn layers on Si3N4 substrate
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
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چکیده انگلیسی
Solid phase crystallization (SPC) of amorphous GeSn (a-GeSn) layers with a Sn content of 2% on various insulating substrates of Si3N4, sapphire, and Y2O3 have been investigated. We found that Si3N4, which has almost same value of a higher surface energy with sapphire and the value is about twice as high as Y2O3, could be reduced the SPC temperature of a-GeSn layers (to 400 °C) compared with the other cases. We can see that a maximum grain size as large as 0.9 µm was achieved for polycrystalline GeSn layers on Si3N4 by the annealing at 450 °C for 5 h. Correspondingly, a relatively higher Hall hole mobility (180 cm2/Vs) was obtained.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science in Semiconductor Processing - Volume 70, 1 November 2017, Pages 151-155
Journal: Materials Science in Semiconductor Processing - Volume 70, 1 November 2017, Pages 151-155
نویسندگان
Isao Yoshikawa, Masashi Kurosawa, Wakana Takeuchi, Mitsuo Sakashita, Osamu Nakatsuka, Shigeaki Zaima,