کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5005897 | 1461377 | 2017 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Modulation of Fermi level pining position at metal/n-Ge interface by semimetal Ge1âxSnx and Sn interlayers
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
We have investigated the dependence on the metal work function of Schottky barrier height (SBH) of metal/Ge1âxSnx/n-Ge Schottky diode and have discussed the mechanism of SBH reduction by insertion of a Ge1âxSnx interlayer. The SBH of metal/Ge1âxSnx/n-Ge Schottky diodes for various metal electrodes of Zr, Al, and Au were estimated. Even after the insertion of Ge1âxSnx layer at various metal/n-Ge interface, the dependence of SBH on the metal work function is weak as well as direct metal/n-Ge contact. We also found that the SBH decreases by 0.1-0.2 eV by the insertion of a Ge1âxSnx or Sn layer regardless of the metal work function. This result means that the SBH is determined only by the interfacial semimetal Ge1âxSnx layer. Considering that density of states at the EF and momentum of electrons in semimetal Ge1âxSnx and α-Sn are small, those epitaxial interlayers would suppress the metal induced gap state at the metal/Ge interface as well as the disorder induced gap states. Additionally, we demonstrated the reduction of the metal/n-Ge contact resistivity by introduction of a Ge1âxSnx interlayer.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science in Semiconductor Processing - Volume 70, 1 November 2017, Pages 162-166
Journal: Materials Science in Semiconductor Processing - Volume 70, 1 November 2017, Pages 162-166
نویسندگان
Akihiro Suzuki, Osamu Nakatsuka, Mitsuo Sakashita, Shigeaki Zaima,