کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5005901 | 1461377 | 2017 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Impact of phosphorus doping to multiple-stacked Si quantum dots on electron emission properties
ترجمه فارسی عنوان
اثر دوپینگ فسفر به نقاط کوانتومی سی چندگانه بر خواص انتشار الکترون
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
چکیده انگلیسی
We have fabricated multiple-stacked phosphorous doped Si quantum dots (P-doped Si-QDs) embedded in SiO2 on n-Si(100) structures and characterized their field electron emission under DC bias application to semitransparent Au top-electrodes. At applied biases of â8 V and over, the electron emission signal with a peak kinetic energy at ~2.0Â eV was detected. In addition, we also found that the electron emission was drastically enhanced with an increase in the applied DC bias over â11 V. The applied bias dependence of emission intensities shows that the P-doped Si-QDs is effective to improve electron emission efficiency while undoped Si-QDs stack is suited to low power operation. This indicates that electric field was reduced near the top side of the Si-QDs stack and an increase in electron injection rate from the n-Si(100) to the dots by phosphorus doping plays a role on high efficient electron emission from the Si-QDs stacked structures.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science in Semiconductor Processing - Volume 70, 1 November 2017, Pages 183-187
Journal: Materials Science in Semiconductor Processing - Volume 70, 1 November 2017, Pages 183-187
نویسندگان
Daichi Takeuchi, Katsunori Makihara, Akio Ohta, Mitsuhisa Ikeda, Seiichi Miyazaki,