کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
5005901 1461377 2017 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Impact of phosphorus doping to multiple-stacked Si quantum dots on electron emission properties
ترجمه فارسی عنوان
اثر دوپینگ فسفر به نقاط کوانتومی سی چندگانه بر خواص انتشار الکترون
موضوعات مرتبط
مهندسی و علوم پایه سایر رشته های مهندسی مهندسی برق و الکترونیک
چکیده انگلیسی
We have fabricated multiple-stacked phosphorous doped Si quantum dots (P-doped Si-QDs) embedded in SiO2 on n-Si(100) structures and characterized their field electron emission under DC bias application to semitransparent Au top-electrodes. At applied biases of −8 V and over, the electron emission signal with a peak kinetic energy at ~2.0 eV was detected. In addition, we also found that the electron emission was drastically enhanced with an increase in the applied DC bias over −11 V. The applied bias dependence of emission intensities shows that the P-doped Si-QDs is effective to improve electron emission efficiency while undoped Si-QDs stack is suited to low power operation. This indicates that electric field was reduced near the top side of the Si-QDs stack and an increase in electron injection rate from the n-Si(100) to the dots by phosphorus doping plays a role on high efficient electron emission from the Si-QDs stacked structures.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science in Semiconductor Processing - Volume 70, 1 November 2017, Pages 183-187
نویسندگان
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