کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5005905 | 1461377 | 2017 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Characterization of deep defects in boron-doped CVD diamond films using transient photocapacitance method
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موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Characterization of deep defects in boron-doped CVD diamond films using transient photocapacitance method Characterization of deep defects in boron-doped CVD diamond films using transient photocapacitance method](/preview/png/5005905.png)
چکیده انگلیسی
We have developed a highly-sensitive transient photocapacitance measurement (TPM) system for deep defects in wide bandgap materials, and applied it to characterize the boron-doped diamond films grown on a high-pressure/high-temperature-synthesized Ib diamond substrate using high-power-density microwave-plasma chemical vapor deposition method. The developed TPM system has both a low detection limit of less than 0.5 fF for changes in the photocapacitance and a low measurement temperature drift of less than 0.03Â K in 12Â h. By using the TPM system, we have successfully found an acceptor-type defect around 1.2Â eV above the valence-band maximum for the B-doped diamond film with a considerably high crystalline quality that had some strong exciton emission peaks in the cathodoluminescence spectra taken at â80Â K. The photoionization cross section and the defect density estimated for the observed defect were 3.1Ã10-15Â cm2 and 2.8Ã1016Â cmâ3, respectively.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science in Semiconductor Processing - Volume 70, 1 November 2017, Pages 203-206
Journal: Materials Science in Semiconductor Processing - Volume 70, 1 November 2017, Pages 203-206
نویسندگان
Osamu Maida, Takanori Hori, Taishi Kodama, Toshimichi Ito,