کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
5005906 1461377 2017 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Displacement current of Au/p-diamond Schottky contacts
موضوعات مرتبط
مهندسی و علوم پایه سایر رشته های مهندسی مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
Displacement current of Au/p-diamond Schottky contacts
چکیده انگلیسی
In this study, the displacement current of Au/p-diamond Schottky contacts was studied by comparing them with low-Mg-doped p-GaN Schottky contacts. In the current-voltage (I-V) characteristics, the current was proportional to the voltage sweep speed at V >−1.5 V. The differential output waveform was obtained through AC operation. Therefore, the displacement current was dominant in the low voltage region where in the true current was extremely small due to the large Schottky barrier height of 1.57 eV. The memory effect, due to the charge and discharge of localized acceptor-type deep-level defects, was negligible in the I-V curve. A clear AC differential signal was confirmed. This suggested that the interface defect density of the p-diamond contacts was very small compared to the p-GaN contacts. Hence, p-diamond Schottky contacts were expected to be a good candidate for a key device such as a phase modulator in a wireless transmitter.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science in Semiconductor Processing - Volume 70, 1 November 2017, Pages 207-212
نویسندگان
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