Electrochemical polishing of monocrystalline silicon with specific crystallographic planes

In this study, an electrolytic polishing experimental system was developed to obtain a uniform, flat-surfaced monocrystalline silicon with specific crystallographic planes. Several key factors reflecting specific electrolytic polishing on monocrystalline silicon with specific crystallographic planes were summarized. These factors, including electrolyte, conduction mode, Schottky barrier, semiconductor body resistance, and unidirectional conductivity, were analyzed comprehensively through energy spectrum analysis, theoretical modeling, and potential simulation. The effects of electrolytic polishing process were obtained, and corresponding solutions were proposed. Finally, the electrolytic polishing experiment for monocrystalline silicon with specific crystallographic planes was conducted. A uniform, flat-surfaced monocrystalline silicon with no metamorphic layer was then obtained. The flatness error of the center area was less than 0.201 µm. Furthermore, the crystallographic planes of monocrystalline silicon wafers showed no change.