کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
5005928 1461380 2017 8 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Electrical, photovoltaic and photosensitivity characteristics of p-ZnTe:N/CdTe:Mg/n-CdTe:I/GaAs for photodiode applications
موضوعات مرتبط
مهندسی و علوم پایه سایر رشته های مهندسی مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
Electrical, photovoltaic and photosensitivity characteristics of p-ZnTe:N/CdTe:Mg/n-CdTe:I/GaAs for photodiode applications
چکیده انگلیسی
In this work, heterojunctions of p-ZnTe:N/CdTe:Mg/n-CdTe:I/GaAs for photovoltaic and photodiode application were grown epitaxially by using molecular beam system. Current-voltage profile of the heterojunction device was studied in dark and under various illumination intensities. The obtained photocurrent is found to depend on the light intensity. The main heterojunction parameters, such as shunt and series resistances, the barrier height and the ideality factor were extracted from the current-voltage profile using diverse methods at ambient temperature. Values of the barrier height and the series resistance were obtained from Cheung's functions. A large value of the series resistance causes the non-ideal characteristics of current-voltage measurements. The study of the current-voltage characteristics of high voltage region suggests a predominant space charge limited mechanism. Moderate values of short circuit current and open circuit voltage were obtained through a light intensity of 140 mW/cm2, a current and voltages of 0.336 mA and 370 mV, respectively. The high photosensitivity and responsivity for the current under illumination condition suggests that the prepared heterojunction device could be employed as a photodiode sensor.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science in Semiconductor Processing - Volume 67, 15 August 2017, Pages 33-40
نویسندگان
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