کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
5005943 1461380 2017 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Growth of ZnGeP2 single crystals by modified vertical Bridgman method for nonlinear optical devices
موضوعات مرتبط
مهندسی و علوم پایه سایر رشته های مهندسی مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
Growth of ZnGeP2 single crystals by modified vertical Bridgman method for nonlinear optical devices
چکیده انگلیسی
The effects of temperature gradients and crucible materials on ZnGeP2 single crystal, grown by vertical Bridgman method, were studied. Growth were carried out in quartz crucible, quartz crucible with carbon film coated on the inner wall, and PBN crucible respectively. X-ray diffraction (XRD), X-ray fluorescence (XRF) and Fourier transform infrared spectrophotometry (FTIR) were employed to characterize the quality of grown crystals. By annealing in ZnGeP2 powder, its optical properties were found to be improved. A ZnGeP2 optical parametric oscillator (ZGP-OPO) sample was fabricated from the annealed crystal. Laser experiments were carried out on ZGP-OPO by 2.1 µm, 7 kHz laser to obtain tuning laser in the range of 3-5 µm.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science in Semiconductor Processing - Volume 67, 15 August 2017, Pages 147-151
نویسندگان
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