کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5005943 | 1461380 | 2017 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Growth of ZnGeP2 single crystals by modified vertical Bridgman method for nonlinear optical devices
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Growth of ZnGeP2 single crystals by modified vertical Bridgman method for nonlinear optical devices Growth of ZnGeP2 single crystals by modified vertical Bridgman method for nonlinear optical devices](/preview/png/5005943.png)
چکیده انگلیسی
The effects of temperature gradients and crucible materials on ZnGeP2 single crystal, grown by vertical Bridgman method, were studied. Growth were carried out in quartz crucible, quartz crucible with carbon film coated on the inner wall, and PBN crucible respectively. X-ray diffraction (XRD), X-ray fluorescence (XRF) and Fourier transform infrared spectrophotometry (FTIR) were employed to characterize the quality of grown crystals. By annealing in ZnGeP2 powder, its optical properties were found to be improved. A ZnGeP2 optical parametric oscillator (ZGP-OPO) sample was fabricated from the annealed crystal. Laser experiments were carried out on ZGP-OPO by 2.1 µm, 7 kHz laser to obtain tuning laser in the range of 3-5 µm.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science in Semiconductor Processing - Volume 67, 15 August 2017, Pages 147-151
Journal: Materials Science in Semiconductor Processing - Volume 67, 15 August 2017, Pages 147-151
نویسندگان
Deng-Hui Yang, Bei-Jun Zhao, Bao-Jun Chen, Shi-Fu Zhu, Zhi-Yu He, Zhang-Rui Zhao, Meng-Di Liu,