کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5005980 | 1461381 | 2017 | 8 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Variation of the structural, optical and electrical properties of CBD CdO with processing temperature
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موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
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چکیده انگلیسی
Nanostructures of CdO thin films are prepared by chemical bath deposition (CBD) technique. The synthesized film is annealed in static air by using the hotplate at 373, 473, 573 and 673Â K for 10Â min. The effect of annealing temperature on structural, morphological, optical and electrical properties of CdO thin films has been investigated. The prepared thin films are characterised by X-ray diffraction (XRD), atomic force microscope (AFM), optical reflection microscope (ORM), UV-Visible Spectrophotometer and electrical resistivity. XRD shows the emergence of the cubic phase of CdO film in a preferred orientation (111) plane at 573Â K. The AFM and ORM show that CdO films have smooth homogeneous surface in the formula with the emergence of nanoclusters gathering as nanoparticles with the average of grain size about 100Â nm at 573Â K. The optical properties prove that deposited films have high transparency within the visible range of the spectrum that reaches to more than 85% with a wide band gap that extends from 2.42Â eV to 2.7Â eV. The electrical properties of the CdO films show that resistivity decreases with increased annealing temperatures. In addition, it is proved that more than one activation energy appears and they change according to the temperature of annealing and this comes as a result of the polycrystalline structure. This study indicates that the properties of CdO thin films could be improved with annealing temperature and these films can be used in many technological applications.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science in Semiconductor Processing - Volume 66, 1 August 2017, Pages 215-222
Journal: Materials Science in Semiconductor Processing - Volume 66, 1 August 2017, Pages 215-222
نویسندگان
Hani H. Ahmed,