کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
5005984 1461381 2017 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Theoretical and experimental investigations of the thermoelectric properties of Al-, Bi- and Sn-doped ZnO
موضوعات مرتبط
مهندسی و علوم پایه سایر رشته های مهندسی مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
Theoretical and experimental investigations of the thermoelectric properties of Al-, Bi- and Sn-doped ZnO
چکیده انگلیسی
In this paper, the thermoelectric properties of ZnO doped with Al, Bi and Sn were investigated by combining experimental and theoretical methods. The average Seebeck coefficient of Bi doped ZnO over the measured temperature range is improved from −90 to −497 μV/K. However, segregation of Bi2O3 in ZnO:Bi sample, confirmed by FESEM, lead to enormous grain growth and low electrical conductivity, which makes Bi is not a good dopant to improve ZT value of ZnO. As a 4+ valence cation, Sn doping actually show an increase in carrier concentration to 1020 cm−3, further enhancing the electrical conductivity. Unfortunately, the Seebeck coefficient of ZnO:Sn samples is even lower than pure ZnO sample, which lead to a low ZT value. As for ZnO:Al sample, with nearly no change in lattice thermal conductivity, electrical conductivity and Seebeck coefficient were both enhanced. Threefold enhancement in ZT value has been achieved in ZnO:Al sample at 760 °C compared with pure ZnO.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science in Semiconductor Processing - Volume 66, 1 August 2017, Pages 247-252
نویسندگان
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