کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5006026 | 1461379 | 2017 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Source-drain resistance characteristics of back-channel etched amorphous InGaZnO thin film transistors with TiO2:Nb protective layer
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Source-drain resistance characteristics of back-channel etched amorphous InGaZnO thin film transistors with TiO2:Nb protective layer Source-drain resistance characteristics of back-channel etched amorphous InGaZnO thin film transistors with TiO2:Nb protective layer](/preview/png/5006026.png)
چکیده انگلیسی
This work investigates the source-drain (S-D) parasitic resistance (RSD) characteristics of the back-channel-etched (BCE) a-IGZO TFTs with ultra-thin Nb doped TiO2 (TNO) protective layer. It is shown that RSD is strongly related to the thickness of the TNO protective layer although the electrical performances of the BCE a-IGZO TFTs with different TNO thickness are similar to each other. The BCE TFT with 3 nm TNO shows an unusually large RSD value (300 Ω cm). It is suggested that a ~3 nm TNO depletion layer should be formed at the TNO/a-IGZO interface in the S-D region in this case. In addition, RSD of the BCE TFTs with 1 and 5 nm TNO is 11 and 26 Ω cm, respectively. The low RSD of these two devices is caused by much thinner TNO depletion layers in the S-D region. Besides, a moderate RSD of 53 Ω cm for the S-D lift-off device can be ascribed to a lower a-IGZO band bending at the Mo/a-IGZO interface than that of the BCE devices at the TNO/a-IGZO interface.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science in Semiconductor Processing - Volume 68, September 2017, Pages 147-151
Journal: Materials Science in Semiconductor Processing - Volume 68, September 2017, Pages 147-151
نویسندگان
Letao Zhang, Xiaoliang Zhou, Baozhu Chang, Longyan Wang, Yuxiang Xiao, Hongyu He, Shengdong Zhang,