کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5006093 | 1461386 | 2017 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Density of states measurements in a-Si:H and a-Si:H/nc-Si:H multilayer structures prepared by hot wire chemical vapor deposition
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Density of states measurements in a-Si:H and a-Si:H/nc-Si:H multilayer structures prepared by hot wire chemical vapor deposition Density of states measurements in a-Si:H and a-Si:H/nc-Si:H multilayer structures prepared by hot wire chemical vapor deposition](/preview/png/5006093.png)
چکیده انگلیسی
In this study, the density of states (DOS) were determined in single layer hydrogenated amorphous silicon (a-Si: H) and a-Si:H/nc-Si:H (hydrogenated nanocrystalline silicon) multilayered structures, prepared by hot wire chemical vapor deposition, by measuring space-charge limited currents in sandwich geometry using ITO(Indium Tin Oxide)/a-Si:H/Ag and ITO{aâSi:H/ncâSi:H}n/Ag structures. Comparisons showed that the DOS of a-Si:H layer in a-Si:H/nc-Si:H multilayer structures were higher than that of single layer a-Si:H film for the same shift in ÎEfn. The higher DOS in multilayer structures may be due to the existence of interface states between the a-Si:H and nc-Si:H layers, which could also change the local electric field at the junction under the no-bias condition. These interface states were also shown to be responsible for the observed persistent photoconductivity in these a-Si:H/nc-Si:H multilayer structures.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science in Semiconductor Processing - Volume 61, April 2017, Pages 5-10
Journal: Materials Science in Semiconductor Processing - Volume 61, April 2017, Pages 5-10
نویسندگان
Asha Yadav, Pratima Agarwal,