کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5006098 | 1461386 | 2017 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Annealing effects on the electrical properties of spin coated poly (3-hexylthiophene) (P3HT) thin films
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Poly (3-hexylthiophene-2, 5-diyl) (P3HT) thin films were prepared using spin coating technique and the effect of annealing on the bias switching for memory applications were studied. Due to annealing, the threshold voltage for switching was reduced considerably. In bias switching, threshold voltage was least for the sample annealed at 100 °C. Addition of phenyl-C61-butyric acid-methyl-ester (PCBM) into P3HT also reduced the threshold voltage. It was also found that the devices with gold (Au) top electrode switched at a lower threshold voltage compared to their aluminium (Al) counterparts.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science in Semiconductor Processing - Volume 61, April 2017, Pages 39-44
Journal: Materials Science in Semiconductor Processing - Volume 61, April 2017, Pages 39-44
نویسندگان
P. Aruna, C.M. Joseph,