کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5006114 | 1461386 | 2017 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
TiSiOx gate dielectrics produced by reactive sputtering for high performance InGaZnO thin film transistors
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موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
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چکیده انگلیسی
High dielectric constant TiSiOx thin films are produced by reactive sputtering under different oxygen partial pressure ratio (PO2) from 15% to 30%. All the TiSiOx films show an excellent transmittance value of almost 95%. The TiSiOx film has a low leakage current density by optimizing oxygen partial pressure, and the leakage current density of TiSiOx film under PO2 of 20% is 4.88Ã10â7Â A/cm2 at electrical field strength of 2Â MV/cm. Meanwhile, their associated InGaZnO thin-film transistors (IGZO-TFTs) with different PO2 TiSiOx thin films as gate insulators are fabricated. IGZO-TFTs under PO2 of 20% shows an optimized electrical performance, and the threshold voltage, sub-threshold swing, field effect mobility and Ion/Ioff ratio of this device are 2.22Â V, 0.33Â V/decade, 29.3Â cm2/V s and 5.03Ã107, respectively. Moreover, the density of states (DOS) is calculated by temperature-dependent field-effect measurement. The enhancements of electrical performance and temperature stability are attributed to better active/insulator interface and smaller DOS.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science in Semiconductor Processing - Volume 61, April 2017, Pages 125-130
Journal: Materials Science in Semiconductor Processing - Volume 61, April 2017, Pages 125-130
نویسندگان
Yi-Zhou Fu, Jun Li, Cheng-Yu Zhao, Chuan-Xin Huang, Jian-Hua Zhang, Xi-Feng Li, Xue-Yin Jiang, Zhi-Lin Zhang,